Thank you for taking an interest in part number S82S131F 883B, a Philips Semiconductors Ltd product we have in stock that is listed alongside the NSN 5962011051328 and the description “Microcircuit Memory.” As part number S82S131F 883B is readily available for purchase on our website at any time, you are invited to fill out and submit the RFQ form provided on this page for the means of requesting a quote for your comparisons. All that we ask is that you supply us with important information such as your target price and expected shipping time frame so that we can best tailor a solution that caters to your unique needs and restrictions alike.
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To ensure that you only procure the exact items you require for carrying out operations, we list all aerospace parts, military and defense parts, and other product offerings with all applicable information for identification. For example, part number S82S131F 883B is listed alongside the NSN 5962-01-105-1328, meaning that it also belongs to FSC 5962 Microcircuits Electronic. Furthermore, this NSN part is specifically manufactured under CAGE Code 18324, a unique identifier belonging to the manufacturer for a specific facility. With all of this in mind, kick off purchasing with us today and see why so many customers steadily choose us for their operational needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-105-1328 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 011051328 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5306-1D | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 49956-952369 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RADAR SET,TYPE AN/FPS-115 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND 3-STATE OUTPUT |
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