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Request a Quote on VG021085-015 Boeing Company The Part with the NSN 5962014136857

Part Number: VG021085-015
Alternate P/N: VG021085015
Manufacturer: Boeing Company The
NIIN: 014136857
Item Name : Microcircuit Memory
CAGE Code: 51215
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

Thank you for taking an interest in part number VG021085-015, a Boeing Company The product we have in stock that is listed alongside the NSN 5962014136857 and the description “Microcircuit Memory.” As part number VG021085-015 is readily available for purchase on our website at any time, you are invited to fill out and submit the RFQ form provided on this page for the means of requesting a quote for your comparisons. All that we ask is that you supply us with important information such as your target price and expected shipping time frame so that we can best tailor a solution that caters to your unique needs and restrictions alike.

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To ensure that you only procure the exact items you require for carrying out operations, we list all aerospace parts, military and defense parts, and other product offerings with all applicable information for identification. For example, part number VG021085-015 is listed alongside the NSN 5962-01-413-6857, meaning that it also belongs to FSC 5962 Microcircuits Electronic. Furthermore, this NSN part is specifically manufactured under CAGE Code 51215, a unique identifier belonging to the manufacturer for a specific facility. With all of this in mind, kick off purchasing with us today and see why so many customers steadily choose us for their operational needs.

NSN Information for Part Number VG021085-015 with NSN 5962-01-413-6857, 5962014136857

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-413-6857

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620141368570NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
VG021085-015523

Characteristics Data of NSN 5962-01-413-6857, 5962014136857

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
AGAVEND ITEM IDENTIFICATIONAGM-130/TVGS"
CBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE"
CQSJINCLOSURE MATERIALSILICON"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CRTLCRITICALITY CODE JUSTIFICATIONCBBL"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT-ERASEABLE PROGRAMMABLE READ ONLY MEMORY"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY"
CZEQTIME RATING PER CHACTERISTIC55.00 NANOSECONDS NOMINAL ACCESS"
CZERMEMORY DEVICE TYPEEPROM"
FEATSPECIAL FEATURESALTERED ITEM, MAKE FROM P/N 5962-8953702YX, DWG NAME MICROCIRCUITS, MEMORY, DIGITAL CMOS, 16K X 8 UV EPROM, MONOLITHIC SILICON; ENDURANCE 25 CYCLES/BYTE, MINIMUM"
TESTTEST DATA DOCUMENT96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)."
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
AGAVEND ITEM IDENTIFICATIONAGM-130/TVGS"
CBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE"
CQSJINCLOSURE MATERIALSILICON"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CRTLCRITICALITY CODE JUSTIFICATIONCBBL"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT-ERASEABLE PROGRAMMABLE READ ONLY MEMORY"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY"
CZEQTIME RATING PER CHACTERISTIC55.00 NANOSECONDS NOMINAL ACCESS"
CZERMEMORY DEVICE TYPEEPROM"
FEATSPECIAL FEATURESALTERED ITEM, MAKE FROM P/N 5962-8953702YX, DWG NAME MICROCIRCUITS, MEMORY, DIGITAL CMOS, 16K X 8 UV EPROM, MONOLITHIC SILICON; ENDURANCE 25 CYCLES/BYTE, MINIMUM"
TESTTEST DATA DOCUMENT96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)."
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"

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