| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-292-9209 (012929209) |
| NCB Code | USA (01) |
| Manufacturer | Texas Instruments Inc, Dla Land And Maritime, Raytheon Company, Advanced Micro Devices Inc, National Semiconductor Corporation, University Of Texas At Austin, Military Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| SNC54S472J | texas instruments inc | microcircuit memory | 01295 | RFQ |
| 5962-8769002RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8769002RX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-87690 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| ROM PROM HEAD 016 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| 72-00745-107 | raytheon company | microcircuit memory | 00724 | RFQ |
| 5962-8769002RA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| AM27S29DMB | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| DM54S472J 883 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| AM27S29DC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S29A BRA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| ED1363-001 | university of texas at austin | microcircuit memory | 55354 | RFQ |
| M38510-20805BRX | military specifications | microcircuit memory | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 880.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -30.00 MILLIAMPERES MINIMUM INPUT AND 5.00 MILLIAMPERES MAXIMUM INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-292-9209, 5962012929209 | ||||
| 5930-01-201-0344 (5930012010344) | 5935-00-733-6624 (5935007336624) | 5935-01-670-0032 (5935016700032) | 5935-01-238-8280 (5935012388280) | |
| 5945-00-772-0597 (5945007720597) | 5998-01-470-7299 (5998014707299) | 5998-01-450-1035 (5998014501035) | 5995-01-305-0350 (5995013050350) | |
| 5935-01-438-9012 (5935014389012) | 5998-01-080-8351 (5998010808351) | 5998-01-518-1172 (5998015181172) | 5935-01-141-2602 (5935011412602) | |
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