| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-197-8703 (011978703) |
| NCB Code | USA (01) |
| Manufacturer | Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Bae Systems Inc, Lockheed Martin Corporation, Synertek, Advanced Micro Devices Inc, Cypress Semiconductor Inc, Drs Sustainment Systems Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| G111397-1 | raytheon company | microcircuit memory | 49956 | RFQ |
| 5962PL0930421 | inspektorat wsparcia sil zbrojnych | microcircuit memory | 9009h | RFQ |
| 312234-003 | bae systems inc | microcircuit memory | 81413 | RFQ |
| 7908419-05 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
| G303488-103 | raytheon company | microcircuit memory | 49956 | RFQ |
| SYMC2148H-2 | synertek | microcircuit memory | 55576 | RFQ |
| AM2148 55 BVA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| CY2148-55DBM | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
| CY2148-55DMB | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
| AM2148-45DM-B | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM2148-45 BVA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| ES5455-02 | drs sustainment systems inc | microcircuit memory | 20418 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1200.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | BIT QUANTITY 4096; WORD QUANTITY 1024 |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-197-8703, 5962011978703 | ||||
| 5960-00-188-0930 (5960001880930) | 5905-01-265-9950 (5905012659950) | 5995-01-379-1584 (5995013791584) | 5962-01-243-3066 (5962012433066) | |
| 5995-01-565-3889 (5995015653889) | 5985-00-438-3422 (5985004383422) | 5995-01-570-5082 (5995015705082) | 5935-01-232-5654 (5935012325654) | |
| 5935-00-925-1739 (5935009251739) | 5985-01-314-9148 (5985013149148) | 5998-01-280-1852 (5998012801852) | 5935-01-310-6114 (5935013106114) | |
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