| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-040-4352 (010404352) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, Lockheed Martin Corporation, Mmi Amd |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| ROM/PROM FAMILY 008 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| 278539-27 | lockheed martin corporation | microcircuit memory | 60854 | RFQ |
| 6306-1J | mmi amd | microcircuit memory | 50364 | RFQ |
| 278539-27 | mmi amd | microcircuit memory | 50364 | RFQ |
| MM6306 1J | mmi amd | microcircuit memory | 50364 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 625.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 0.0/75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | CHEYENNE AIRCRAFT MODEL 427M |
| CBBL | FEATURES PROVIDED | BIPOLAR AND HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/DISABLE AND W/ENABLE AND W/STORAGE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 11530-278539 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-040-4352, 5962010404352 | ||||
| 5960-00-188-0930 (5960001880930) | 5905-01-265-9950 (5905012659950) | 5995-01-379-1584 (5995013791584) | 5962-01-243-3066 (5962012433066) | |
| 5995-01-565-3889 (5995015653889) | 5985-00-438-3422 (5985004383422) | 5995-01-570-5082 (5995015705082) | 5935-01-232-5654 (5935012325654) | |
| 5935-00-925-1739 (5935009251739) | 5985-01-314-9148 (5985013149148) | 5998-01-280-1852 (5998012801852) | 5935-01-310-6114 (5935013106114) | |
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