| Item Name | Transistor |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-641-5820 (016415820) |
| NCB Code | USA (01) |
| Manufacturer | Microsemi Corporation |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTRD | Power Rating Per Characteristic | 583.0 WATTS NOMINAL TOTAL POWER DISSIPATION |
| FEAT | Special Features | DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN; APPLICATIONS; 200 W (TYP.) IFF 1030 - 1090 MHZ; 150 W (MIN.) DME 1025 - 1150 MHZ; 140 W (TYP.) TACAN 960 - 1215 MHZ; 8.2 DB GAIN; REFRACTORY GOLD METALLIZATION; BALLASTING ANDLOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS; 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS; |
| CXCY | Part Name Assigned By Controlling Agency | RF AND MICROWAVE TRANSISTOR |
| CTMZ | Semiconductor Material | SILICON ALLOY |
| ABBH | Inclosure Material | CERAMIC AND METAL |
| CTQX | Current Rating Per Characteristic | 10.0 MILLIAMPERES MAXIMUM EMITTER CURRENT, INSTANTANEOUS |
| ABHP | Overall Length | 0.895 INCHES MINIMUM AND 0.906 INCHES MAXIMUM |
| MRC | Decoded Requirement | Clear Text Reply |
| Relevant Components for NSN - 5961-01-641-5820, 5961016415820 | ||||
| 5930-01-201-0344 (5930012010344) | 5935-00-733-6624 (5935007336624) | 5935-01-670-0032 (5935016700032) | 5935-01-238-8280 (5935012388280) | |
| 5945-00-772-0597 (5945007720597) | 5998-01-470-7299 (5998014707299) | 5998-01-450-1035 (5998014501035) | 5995-01-305-0350 (5995013050350) | |
| 5935-01-438-9012 (5935014389012) | 5998-01-080-8351 (5998010808351) | 5998-01-518-1172 (5998015181172) | 5935-01-141-2602 (5935011412602) | |
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