Thank you for taking an interest in the NSN 5961-01-357-8135 supplies and listing resources that we provide on Integrated Military Parts. At the top of this page, you will find an overview of NSN 5961-01-357-8135, including details on its associated item name, Federal Supply Group, Federal Supply Class, and more. You can also review a list of all manufacturers that our stock traces back to, each serving as a link to expanded catalogs if you wish to further your search.
Underneath our overview, part numbers like JANTXV1N5907, G309-611, 7555309P0611, DZ880826A, M309-611, and others that belong to our NSN 5961-01-357-8135 inventory have been listed out for your perusal. If any are of interest to you, click on the “RFQ” button to its right to access a quote request form. By filling out and submitting a form with detailed information on your requirements and expectations, you will be able to secure fully customized quotes for your comparisons. You can rest assured that you will receive highly competitive options when you shop on Integrated Military Parts, our staff working tirelessly to ensure streamlined fulfillment and satisfaction. Knowing how we intend to serve you, continue perusing solutions on this catalog and reach out as soon as you are ready.
Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-357-8135 (013578135) |
NCB Code | USA (01) |
Manufacturer | Microsemi Corporation, General Semiconductor Inc, Lockheed Martin Corporation, Dla Land And Maritime |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
JANTXV1N5907 | microsemi corporation | semiconductor device diode | 43611 | RFQ |
G309-611 | general semiconductor inc | semiconductor device diode | 24444 | RFQ |
7555309P0611 | lockheed martin corporation | semiconductor device diode | 99971 | RFQ |
DZ880826A | microsemi corporation | semiconductor device diode | 12954 | RFQ |
M309-611 | microsemi corporation | semiconductor device diode | 14552 | RFQ |
NH7555309P611 | dla land and maritime | semiconductor device diode | 16236 | RFQ |
7555309P611 | lockheed martin corporation | semiconductor device diode | 99971 | RFQ |
JANTXV1N5907 | general semiconductor inc | semiconductor device diode | 24444 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MINIMUM BREAKDOWN VOLTAGE,DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION,DC |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ABHP | OVERALL LENGTH | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT,INSTANTANEOUS |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-13 |
MATT | MATERIAL | GLASS OR CERAMIC INCLOSURE |
Relevant Components for NSN - 5961-01-357-8135, 5961013578135 | ||||
5905-01-250-3151 (5905012503151) | 5998-00-368-0382 (5998003680382) | 5960-00-968-4529 (5960009684529) | 5910-01-189-4318 (5910011894318) | |
5998-01-500-7731 (5998015007731) | 5962-01-589-8586 (5962015898586) | 5998-01-343-1949 (5998013431949) | 5960-00-079-4863 (5960000794863) | |
5945-01-207-6753 (5945012076753) | 5905-00-482-5022 (5905004825022) | 5935-01-673-7094 (5935016737094) | 5930-00-539-7226 (5930005397226) | |
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