| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-333-4342 (013334342) |
| NCB Code | USA (01) |
| Manufacturer | Military Specifications, Joint Electron Device Engineering, Nimikkeistokeskus Ncb Finland, Delco Electronics Corp |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| JANTXIN4120 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N4120 | joint electron device engineering | semiconductor device diode | 07688 | RFQ |
| 10138201 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 78921444-227 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
| MIL-PRF-19500/435 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/435 | military specifications | semiconductor device diode | 81349 | RFQ |
| 7890072-211 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
| JANTX1N4120 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N4120-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| MATT | MATERIAL | GLASS INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| Relevant Components for NSN - 5961-01-333-4342, 5961013334342 | ||||
| 5930-01-201-0344 (5930012010344) | 5935-00-733-6624 (5935007336624) | 5935-01-670-0032 (5935016700032) | 5935-01-238-8280 (5935012388280) | |
| 5945-00-772-0597 (5945007720597) | 5998-01-470-7299 (5998014707299) | 5998-01-450-1035 (5998014501035) | 5995-01-305-0350 (5995013050350) | |
| 5935-01-438-9012 (5935014389012) | 5998-01-080-8351 (5998010808351) | 5998-01-518-1172 (5998015181172) | 5935-01-141-2602 (5935011412602) | |
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