Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-132-0039 (011320039) |
NCB Code | USA (01) |
Manufacturer | Bae Systems Inc, Northrop Grumman Systems Corporation, Military Specifications, Rockwell Collins Aerospace, Datron The Instruments Inc, Texas Instruments Inc, Navair And Navsea Managed, Nimikkeistokeskus Ncb Finland, Lockheed Martin Corporation, Joint Army-Navy Specifications, L 3 Communications Corporation |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
200441-118 | bae systems inc | semiconductor device diode | 81413 | RFQ |
019-003872-060 | northrop grumman systems corporation | semiconductor device diode | 26916 | RFQ |
JANTX1N749A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
995-9502-023 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
374-00044 | datron the instruments inc | semiconductor device diode | 13488 | RFQ |
1N749ASPL | texas instruments inc | semiconductor device diode | 01295 | RFQ |
1820838-4 | navair and navsea managed | semiconductor device diode | 10001 | RFQ |
10133297 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
JANTX1N749A | military specifications | semiconductor device diode | 81349 | RFQ |
650C6 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
7900258-06 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
TX1N759A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N749A | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
HZ8832 | l 3 communications corporation | semiconductor device diode | 73293 | RFQ |
JANTX749A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N749A1 | military specifications | semiconductor device diode | 81349 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.3 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 90.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-01-132-0039, 5961011320039 | ||||
5930-01-201-0344 (5930012010344) | 5935-00-733-6624 (5935007336624) | 5935-01-670-0032 (5935016700032) | 5935-01-238-8280 (5935012388280) | |
5945-00-772-0597 (5945007720597) | 5998-01-470-7299 (5998014707299) | 5998-01-450-1035 (5998014501035) | 5995-01-305-0350 (5995013050350) | |
5935-01-438-9012 (5935014389012) | 5998-01-080-8351 (5998010808351) | 5998-01-518-1172 (5998015181172) | 5935-01-141-2602 (5935011412602) | |
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