Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-990-3049 (009903049) |
NCB Code | USA (00) |
Manufacturer | Telcom Semiconductor Inc, Systron Donner Corp, Raytheon Company, Rockwell Collins Aerospace, Military Specifications, Microsemi Corporation, Electronic Industries Inc, Joint Electron Device Engineering, Adelco Elektronik Gmbh, Raytheon Technical Services Company, Thales Defense And Security Inc, Infineon Technologies, Westinghouse Electric Corp, Texas Instruments Inc, Bae Systems Inc, Joint Army-Navy Specifications, Gte Communication Systems Corp, Gte Products Corp, Litton Systems Inc, Veeco Instruments Inc, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, Genrad Ltd, Tyco Electronics Corporation, Eca Etablissement Central Des, Airbus Defence And Space Limited |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N935 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
107006 | systron donner corp | semiconductor device diode | 01220 | RFQ |
5039-192 | raytheon company | semiconductor device diode | 05869 | RFQ |
353-3157-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
MILS19500TYPEUSN1N93 | military specifications | semiconductor device diode | 81349 | RFQ |
1N935A | microsemi corporation | semiconductor device diode | 12954 | RFQ |
JAN1N935A | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N935 | military specifications | semiconductor device diode | 81349 | RFQ |
1N935 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
1N935A | joint electron device engineering | semiconductor device diode | 07688 | RFQ |
1N935BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
442978 | raytheon technical services company | semiconductor device diode | 36378 | RFQ |
848121-0001 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
JAN1N9358 | military specifications | semiconductor device diode | 81349 | RFQ |
IN935 | infineon technologies | semiconductor device diode | 81483 | RFQ |
585F311PC24 | westinghouse electric corp | semiconductor device diode | 65054 | RFQ |
1N935 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
176140-001 | bae systems inc | semiconductor device diode | 81413 | RFQ |
JAN1N935B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
2835-541 | gte communication systems corp | semiconductor device diode | 04773 | RFQ |
50540198 | gte products corp | semiconductor device diode | 58854 | RFQ |
195001N935B | military specifications | semiconductor device diode | 81349 | RFQ |
947060-9352 | litton systems inc | semiconductor device diode | 13973 | RFQ |
FBMZ103 | veeco instruments inc | semiconductor device diode | 80103 | RFQ |
1N935A | military specifications | semiconductor device diode | 81349 | RFQ |
1N935A | infineon technologies | semiconductor device diode | 81483 | RFQ |
JAN1N9350 | military specifications | semiconductor device diode | 81349 | RFQ |
1N935B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
MIL-PRF-19500/156 | military specifications | semiconductor device diode | 81349 | RFQ |
5961PL0808535 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
570167-3 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
176140-000 | bae systems inc | semiconductor device diode | 81413 | RFQ |
MIL-S-19500/156 | military specifications | semiconductor device diode | 81349 | RFQ |
6083-1026 | genrad ltd | semiconductor device diode | 24655 | RFQ |
28305-4 | tyco electronics corporation | semiconductor device diode | 00779 | RFQ |
JAN1N935B | military specifications | semiconductor device diode | 81349 | RFQ |
5961009903049 | eca etablissement central des | semiconductor device diode | scy13 | RFQ |
Q62702Z829Z | airbus defence and space limited | semiconductor device diode | c0426 | RFQ |
4178600-163 | raytheon company | semiconductor device diode | 05869 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/156 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-00-990-3049, 5961009903049 | ||||
5930-01-201-0344 (5930012010344) | 5935-00-733-6624 (5935007336624) | 5935-01-670-0032 (5935016700032) | 5935-01-238-8280 (5935012388280) | |
5945-00-772-0597 (5945007720597) | 5998-01-470-7299 (5998014707299) | 5998-01-450-1035 (5998014501035) | 5995-01-305-0350 (5995013050350) | |
5935-01-438-9012 (5935014389012) | 5998-01-080-8351 (5998010808351) | 5998-01-518-1172 (5998015181172) | 5935-01-141-2602 (5935011412602) | |
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