Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-865-2063 (008652063) |
NCB Code | USA (00) |
Manufacturer | Military Specifications, Te Ka De Felten, Freescale Semiconductor Inc, Dla Land And Maritime, Yosemite Investment Inc, Joint Electron Device Engineering, Joint Army-Navy Specifications, Inspektorat Wsparcia Sil Zbrojnych, Infineon Technologies, Thales Nederland Bv, Motorola Inc, Racal Communications Systems Ltd, Adelco Elektronik Gmbh, Kearfott Corporation, Thales Uk Ltd, Raytheon Company |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N2970A | military specifications | semiconductor device diode | 81349 | RFQ |
104 4114 156311 | te ka de felten | semiconductor device diode | d8770 | RFQ |
MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
1N2970 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
L03001 | dla land and maritime | semiconductor device diode | 16236 | RFQ |
1N2970A | yosemite investment inc | semiconductor device diode | 37942 | RFQ |
1N2970B | joint electron device engineering | semiconductor device diode | 07688 | RFQ |
1N2970B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
1N2970 | military specifications | semiconductor device diode | 81349 | RFQ |
5961PL0991950 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
1N2970B | military specifications | semiconductor device diode | 81349 | RFQ |
10Z6-8T10 | infineon technologies | semiconductor device diode | 81483 | RFQ |
MIL-S-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
352250010038 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
48-14146A01 | motorola inc | semiconductor device diode | 94990 | RFQ |
22-1845 | racal communications systems ltd | semiconductor device diode | k0215 | RFQ |
JAN1N2970BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
VBE890-1N2970B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
G181-616-0022 | kearfott corporation | semiconductor device diode | 88818 | RFQ |
22-1845 | thales uk ltd | semiconductor device diode | k0162 | RFQ |
JAN1N2970B | military specifications | semiconductor device diode | 81349 | RFQ |
48-14146A01 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
4178600-379 | raytheon company | semiconductor device diode | 05869 | RFQ |
JAN1N2970B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 60.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT,DC AND 250.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
ADAV | OVERALL DIAMETER | 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM |
MATT | MATERIAL | CERAMIC INCLOSURE |
TTQY | TERMINAL TYPE AND QUANTITY | 1 SOLDER STUD AND 1 TAB,SOLDER LUG |
Relevant Components for NSN - 5961-00-865-2063, 5961008652063 | ||||
5930-01-201-0344 (5930012010344) | 5935-00-733-6624 (5935007336624) | 5935-01-670-0032 (5935016700032) | 5935-01-238-8280 (5935012388280) | |
5945-00-772-0597 (5945007720597) | 5998-01-470-7299 (5998014707299) | 5998-01-450-1035 (5998014501035) | 5995-01-305-0350 (5995013050350) | |
5935-01-438-9012 (5935014389012) | 5998-01-080-8351 (5998010808351) | 5998-01-518-1172 (5998015181172) | 5935-01-141-2602 (5935011412602) | |
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